advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 18m fast switching characteristic i d 67a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.75 /w rthj-a 40 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 201011024 1 halogen-free product -55 to 150 288 maximum thermal resistance, junction-ambient (pcb mount) 4 drain-source voltage 100 a p60t10gs/p-hf parameter rating gate-source voltage + 20 continuous drain current, v gs @ 10v 67 continuous drain current, v gs @ 10v 42 pulsed drain current 1 250 total power dissipation 167 parameter storage temperature range operating junction temperature range -55 to 150 thermal data g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-220(p) g d s to-263(s) the to-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap60t10gp) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =28a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =25v, i d =28a - 45 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =28a - 55 90 nc q gs gate-source charge v ds =80v - 15 - nc q gd gate-drain ("miller") charge v gs =10v - 24 - nc t d(on) turn-on delay time 2 v ds =50v - 16 - ns t r rise time i d =28a - 68 - ns t d(off) turn-off delay time r g =2.5 ? ,v gs =10v - 29 - ns t f fall time r d =1.8 ? -42- ns c iss input capacitance v gs =0v - 2800 4500 pf c oss output capacitance v ds =25v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 155 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =28a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =28a, v gs =0v - 80 - ns q rr reverse recovery charge di/dt=100a/s - 270 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 ? , i as =24a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 4.surface mounted on 1 in 2 copper pad of fr4 board ap60t10gs/p-hf
a p60t10gs/p-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 9.0v 8.0v 7.0v v g = 6 .0v 0 20 40 60 80 100 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 9.0v 8.0v 7.0v v g = 6.0 v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 28a v g = 10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v)
ap60t10gs/p-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =60v v ds =80v i d =28a q v g 10v q gs q gd q g charge 0 1000 2000 3000 4000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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